Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

Martin Huber; Ingo Daumiller; Andrei Yu Andreev; Marco Silvestri; Lauri Knuuttila; Anders Lundskog; Michael Wahl; Michael Kopnarski; Alberta Bonanni

doi:10.1063/1.4944652

Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

Martin Huber
, Ingo Daumiller
, Andrei Yu Andreev
, Marco Silvestri
, Lauri Knuuttila
, Anders Lundskog
, Michael Wahl
, Michael Kopnarski
, Alberta Bonanni

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	125701
Pages (from-to)	125701
Number of pages	6
Journal	Journal of Applied Physics
Volume	119
Issue number	12
DOIs	https://doi.org/10.1063/1.4944652
Publication status	Published - 28 Mar 2016

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103011 Semiconductor physics
103018 Materials physics
202032 Photovoltaics
103009 Solid state physics
103017 Magnetism

JKU Focus areas

Engineering and Natural Sciences (in general)

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10.1063/1.4944652

Cite this

Huber, M., Daumiller, I., Andreev, A. Y., Silvestri, M., Knuuttila, L., Lundskog, A., Wahl, M., Kopnarski, M., & Bonanni, A. (2016). Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements. Journal of Applied Physics, 119(12), 125701. Article 125701. https://doi.org/10.1063/1.4944652

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title = "Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements",

author = "Martin Huber and Ingo Daumiller and Andreev, \{Andrei Yu\} and Marco Silvestri and Lauri Knuuttila and Anders Lundskog and Michael Wahl and Michael Kopnarski and Alberta Bonanni",

year = "2016",

month = mar,

day = "28",

doi = "10.1063/1.4944652",

language = "English",

volume = "119",

pages = "125701",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

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}

Huber, M, Daumiller, I, Andreev, AY, Silvestri, M, Knuuttila, L, Lundskog, A, Wahl, M, Kopnarski, M & Bonanni, A 2016, 'Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements', Journal of Applied Physics, vol. 119, no. 12, 125701, pp. 125701. https://doi.org/10.1063/1.4944652

Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements. / Huber, Martin; Daumiller, Ingo; Andreev, Andrei Yu et al.
In: Journal of Applied Physics, Vol. 119, No. 12, 125701, 28.03.2016, p. 125701.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

AU - Huber, Martin

AU - Daumiller, Ingo

AU - Andreev, Andrei Yu

AU - Silvestri, Marco

AU - Knuuttila, Lauri

AU - Lundskog, Anders

AU - Wahl, Michael

AU - Kopnarski, Michael

AU - Bonanni, Alberta

PY - 2016/3/28

Y1 - 2016/3/28

UR - https://www.scopus.com/pages/publications/84977574750

U2 - 10.1063/1.4944652

DO - 10.1063/1.4944652

M3 - Article

SN - 1089-7550

VL - 119

SP - 125701

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 125701

ER -

Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements

Fields of science

JKU Focus areas

Access to Document

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