Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulation

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@article{b97602a3e76446a99cb44c07e5f0a13b,

title = "Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulation",

author = "G. Hobler and A. Simionescu and Leopold Palmetshofer and C. Tian and G. Stingeder",

year = "1995",

doi = "10.1063/1.358608",

language = "English",

volume = "77",

pages = "3697–3703",

journal = "Journal of Applied Physics",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Boron Channeling Implantations in Silicon: Modeling of Electronic Stopping and Damage Accumulation

AU - Hobler, G.

AU - Simionescu, A.

AU - Palmetshofer, Leopold

AU - Tian, C.

AU - Stingeder, G.

PY - 1995

Y1 - 1995

UR - https://www.scopus.com/pages/publications/0001358341

U2 - 10.1063/1.358608

DO - 10.1063/1.358608

M3 - Article

VL - 77

SP - 3697

EP - 3703

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -