Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

Moritz Brehm; Heiko Groiß; Günther Bauer; Dagmar Gerthsen; Roy Clarke; Yossi Paltiel; Yizhak Yacoby

doi:10.1088/0957-4484/26/48/485702

Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

Moritz Brehm, Heiko Groiß, Günther Bauer, Dagmar Gerthsen, Roy Clarke, Yossi Paltiel, Yizhak Yacoby

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

Original language	English
Article number	485702
Pages (from-to)	485702
Number of pages	11
Journal	Nanotechnology
Volume	26
Issue number	48
DOIs	https://doi.org/10.1088/0957-4484/26/48/485702
Publication status	Published - 11 Nov 2015

Fields of science

103 Physics, Astronomy

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1088/0957-4484/26/48/485702

Cite this

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title = "Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates",

abstract = "We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80\% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.",

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T1 - Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

AU - Brehm, Moritz

AU - Groiß, Heiko

AU - Bauer, Günther

AU - Gerthsen, Dagmar

AU - Clarke, Roy

AU - Paltiel, Yossi

AU - Yacoby, Yizhak

PY - 2015/11/11

Y1 - 2015/11/11

N2 - We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

AB - We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

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DO - 10.1088/0957-4484/26/48/485702

M3 - Article

SN - 0957-4484

VL - 26

SP - 485702

JO - Nanotechnology

JF - Nanotechnology

IS - 48

M1 - 485702

ER -

Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

Abstract

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