Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots

Florian Hackl; Martyna Justyna Grydlik; P. Klenovsky; Friedrich Schäffler; Thomas Fromherz; Moritz Brehm

doi:10.1002/andp.201800259

Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots

Florian Hackl, Martyna Justyna Grydlik, P. Klenovsky, Friedrich Schäffler, Thomas Fromherz, Moritz Brehm

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.

Original language	English
Article number	1800259
Pages (from-to)	1800259
Number of pages	12
Journal	Annalen der Physik
Volume	531
Issue number	6
DOIs	https://doi.org/10.1002/andp.201800259
Publication status	Published - 2019

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10.1002/andp.201800259

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title = "Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots",

abstract = "In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.",

author = "Florian Hackl and Grydlik, \{Martyna Justyna\} and P. Klenovsky and Friedrich Sch{\"a}ffler and Thomas Fromherz and Moritz Brehm",

year = "2019",

doi = "10.1002/andp.201800259",

language = "English",

volume = "531",

pages = "1800259",

journal = "Annalen der Physik",

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T1 - Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots

AU - Hackl, Florian

AU - Grydlik, Martyna Justyna

AU - Klenovsky, P.

AU - Schäffler, Friedrich

AU - Fromherz, Thomas

AU - Brehm, Moritz

PY - 2019

Y1 - 2019

N2 - In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.

AB - In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.

UR - https://www.scopus.com/pages/publications/85059865984

U2 - 10.1002/andp.201800259

DO - 10.1002/andp.201800259

M3 - Article

SN - 1521-3889

VL - 531

SP - 1800259

JO - Annalen der Physik

JF - Annalen der Physik

IS - 6

M1 - 1800259

ER -

Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots

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