Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

V. M. Pudalov; M. E. Gershenson; Günther Bauer; Gerhard Brunthaler; H. Kojima

doi:10.1002/pssb.200303634

Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

V. M. Pudalov
, M. E. Gershenson
, Günther Bauer
, Gerhard Brunthaler
, H. Kojima

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	47-53
Number of pages	7
Journal	Physica Status Solidi B: Basic Research
Volume	241
Issue number	1
DOIs	https://doi.org/10.1002/pssb.200303634
Publication status	Published - Jan 2004

Fields of science

103 Physics, Astronomy
103009 Solid state physics
103011 Semiconductor physics
103017 Magnetism
103018 Materials physics
103040 Photonics
202032 Photovoltaics
210006 Nanotechnology

Access to Document

10.1002/pssb.200303634

Cite this

@article{6e09630410dd40138c0ee4d616c75f1b,

title = "Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?",

author = "Pudalov, \{V. M.\} and Gershenson, \{M. E.\} and G{\"u}nther Bauer and Gerhard Brunthaler and H. Kojima",

year = "2004",

month = jan,

doi = "10.1002/pssb.200303634",

language = "English",

volume = "241",

pages = "47--53",

journal = "Physica Status Solidi B: Basic Research",

issn = "1521-3951",