Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si-MOSFETs?

V. M. Pudalov, M. E. Gershenson, Günther Bauer, Gerhard Brunthaler, H. Kojima

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)47-53
Number of pages7
JournalPhysica Status Solidi B: Basic Research
Volume241
DOIs
Publication statusPublished - 2004

Fields of science

  • 103 Physics, Astronomy
  • 103009 Solid state physics
  • 103011 Semiconductor physics
  • 103017 Magnetism
  • 103018 Materials physics
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology

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