Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

Santosh Kumar; Eugenio Zallo; Y. H. Liao; P. Y. Lin; Rinaldo Trotta; Paola Atkinson; Johannes D. Plumhof; F. Ding; B. D. Gerardot; S. J. Cheng; Armando Rastelli; Oliver G. Schmidt

doi:10.1103/PhysRevB.89.115309

Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

Santosh Kumar, Eugenio Zallo, Y. H. Liao, P. Y. Lin, Rinaldo Trotta, Paola Atkinson, Johannes D. Plumhof, F. Ding, B. D. Gerardot, S. J. Cheng, Armando Rastelli, Oliver G. Schmidt

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We study the effects of heavy hole–light hole (HH-LH) mixing on fine-structure and polarization properties of neutral excitons (X0) confined in single GaAs/AlGaAs quantum dots (QDs) under the application of anisotropic biaxial stress. In the large HH-LH mixing regime, these properties are substantially different from the usually observed properties in the case of small or no mixing. By varying the applied stress, the mixing in the initially strain-free QDs changes from ∼0 to ∼70% and an anomalous anticrossing of the X0 bright states is observed. The latter is attributed to stress-induced rotation of the in-plane principal axis of the QD confinement potential. We show that the analysis of free-excitonic emission of bulk GaAs surrounding the QDs not only allows estimation of the stress and mixing in the QDs, but also provides the quantum-confinement-induced HH-LH splitting of the as-grown QDs.

Original language	English
Article number	115309
Pages (from-to)	115309
Number of pages	10
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	89
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.89.115309
Publication status	Published - 2014

Fields of science

103 Physics, Astronomy

JKU Focus areas

Nano-, Bio- and Polymer-Systems: From Structure to Function

Access to Document

10.1103/PhysRevB.89.115309

Cite this

Kumar, S., Zallo, E., Liao, Y. H., Lin, P. Y., Trotta, R., Atkinson, P., Plumhof, J. D., Ding, F., Gerardot, B. D., Cheng, S. J., Rastelli, A., & Schmidt, O. G. (2014). Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots. Physical Review B: Condensed Matter and Materials Physics, 89(11), 115309. Article 115309. https://doi.org/10.1103/PhysRevB.89.115309

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title = "Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots",

abstract = "We study the effects of heavy hole–light hole (HH-LH) mixing on fine-structure and polarization properties of neutral excitons (X0) confined in single GaAs/AlGaAs quantum dots (QDs) under the application of anisotropic biaxial stress. In the large HH-LH mixing regime, these properties are substantially different from the usually observed properties in the case of small or no mixing. By varying the applied stress, the mixing in the initially strain-free QDs changes from ∼0 to ∼70% and an anomalous anticrossing of the X0 bright states is observed. The latter is attributed to stress-induced rotation of the in-plane principal axis of the QD confinement potential. We show that the analysis of free-excitonic emission of bulk GaAs surrounding the QDs not only allows estimation of the stress and mixing in the QDs, but also provides the quantum-confinement-induced HH-LH splitting of the as-grown QDs.",

author = "Santosh Kumar and Eugenio Zallo and Liao, {Y. H.} and Lin, {P. Y.} and Rinaldo Trotta and Paola Atkinson and Plumhof, {Johannes D.} and F. Ding and Gerardot, {B. D.} and Cheng, {S. J.} and Armando Rastelli and Schmidt, {Oliver G.}",

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doi = "10.1103/PhysRevB.89.115309",

language = "English",

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T1 - Anomalous anticrossing of neutral exciton states in GaAs/AlGaAs quantum dots

AU - Kumar, Santosh

AU - Zallo, Eugenio

AU - Liao, Y. H.

AU - Lin, P. Y.

AU - Trotta, Rinaldo

AU - Atkinson, Paola

AU - Plumhof, Johannes D.

AU - Ding, F.

AU - Gerardot, B. D.

AU - Cheng, S. J.

AU - Rastelli, Armando

AU - Schmidt, Oliver G.

PY - 2014

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N2 - We study the effects of heavy hole–light hole (HH-LH) mixing on fine-structure and polarization properties of neutral excitons (X0) confined in single GaAs/AlGaAs quantum dots (QDs) under the application of anisotropic biaxial stress. In the large HH-LH mixing regime, these properties are substantially different from the usually observed properties in the case of small or no mixing. By varying the applied stress, the mixing in the initially strain-free QDs changes from ∼0 to ∼70% and an anomalous anticrossing of the X0 bright states is observed. The latter is attributed to stress-induced rotation of the in-plane principal axis of the QD confinement potential. We show that the analysis of free-excitonic emission of bulk GaAs surrounding the QDs not only allows estimation of the stress and mixing in the QDs, but also provides the quantum-confinement-induced HH-LH splitting of the as-grown QDs.

AB - We study the effects of heavy hole–light hole (HH-LH) mixing on fine-structure and polarization properties of neutral excitons (X0) confined in single GaAs/AlGaAs quantum dots (QDs) under the application of anisotropic biaxial stress. In the large HH-LH mixing regime, these properties are substantially different from the usually observed properties in the case of small or no mixing. By varying the applied stress, the mixing in the initially strain-free QDs changes from ∼0 to ∼70% and an anomalous anticrossing of the X0 bright states is observed. The latter is attributed to stress-induced rotation of the in-plane principal axis of the QD confinement potential. We show that the analysis of free-excitonic emission of bulk GaAs surrounding the QDs not only allows estimation of the stress and mixing in the QDs, but also provides the quantum-confinement-induced HH-LH splitting of the as-grown QDs.

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DO - 10.1103/PhysRevB.89.115309

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