Anodic repassivation of low energy Au-implanted ultra-thin anodic Al2O3

Ultrathin anodic alumina with a film thickness of 11 nm was implanted by Au atoms with low energy of 2, 5 or 10 keV. Stopping range simulations yielded three essentially different geometries ranging from surface near implantation over well penetrated oxide to near oxide metal interface implantation, covering the entire range of possible implantation modifications. This work aims at demonstrating how to perform band gap engineering in alumina not only on an energetic level but also targeting a certain geometrical position of the doping atoms by means of the implantation parameters. Beside the intended implantation the oxide destruction in the implantation path and its possible repair was of interest. The repassivation behaviour was considerably different showing a significant redox contribution of the gold nanoclusters on top of the simple oxide repassivation. Near surface implanted Au remained electrochemically active for low repassivation potentials. Higher repassivation potentials always buried the implanted Au atoms under anodic alumina. The repassivation charge determined allowed determining the volume destructed by the implantation.