Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

A. Meingast; Andrea Navarro-Quezada; Thibaut Devillers; A. Kovacs; Mihela Albu; Stefanie Fladischer; Alberta Bonanni; G. Kothleitner

doi:10.1088/0268-1242/30/3/035002

Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

A. Meingast, Andrea Navarro-Quezada, Thibaut Devillers, A. Kovacs, Mihela Albu, Stefanie Fladischer, Alberta Bonanni, G. Kothleitner

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn)N; (ii)δ - Mn-doped (Ga,δ-Mn)N and phase separated (Ga, Fe)N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.

Original language	English
Article number	035002
Pages (from-to)	035002/1-9
Number of pages	9
Journal	Semiconductor Science and Technology
Volume	30
DOIs	https://doi.org/10.1088/0268-1242/30/3/035002
Publication status	Published - 2015

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103011 Semiconductor physics
103018 Materials physics
202032 Photovoltaics
103009 Solid state physics
103017 Magnetism

JKU Focus areas

Engineering and Natural Sciences (in general)

Access to Document

10.1088/0268-1242/30/3/035002

Cite this

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title = "Analytical electron microscopy study on gallium nitride systems doped with manganese and iron",

abstract = "Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn)N; (ii)δ - Mn-doped (Ga,δ-Mn)N and phase separated (Ga, Fe)N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.",

author = "A. Meingast and Andrea Navarro-Quezada and Thibaut Devillers and A. Kovacs and Mihela Albu and Stefanie Fladischer and Alberta Bonanni and G. Kothleitner",

year = "2015",

doi = "10.1088/0268-1242/30/3/035002",

language = "English",

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TY - JOUR

T1 - Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

AU - Meingast, A.

AU - Navarro-Quezada, Andrea

AU - Devillers, Thibaut

AU - Kovacs, A.

AU - Albu, Mihela

AU - Fladischer, Stefanie

AU - Bonanni, Alberta

AU - Kothleitner, G.

PY - 2015

Y1 - 2015

N2 - Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn)N; (ii)δ - Mn-doped (Ga,δ-Mn)N and phase separated (Ga, Fe)N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.

AB - Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the material, known to be critically correlated to the magnetic response and hence the functionality of these technologically relevant systems. Three classes of samples are considered: (i) homogeneous (dilute) (Ga, Mn)N; (ii)δ - Mn-doped (Ga,δ-Mn)N and phase separated (Ga, Fe)N, containing Fe-rich nanocrystals. The combination of various microscopic techniques employed, allows for a quantitative determination of the distribution of the magnetic ions in the samples, providing essential information on the structural and chemical asset of these systems.

U2 - 10.1088/0268-1242/30/3/035002

DO - 10.1088/0268-1242/30/3/035002

M3 - Article

SN - 0268-1242

VL - 30

SP - 035002/1-9

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

M1 - 035002

ER -