Analysis and Design of a High-Gain 100-180-GHz Differential Power Amplifier in 130nm SiGe BiCMOS

Faisal Ahmed; Muhammad Furqan; Klaus Aufinger; Andreas Stelzer

doi:10.1017/S1759078716001458

Analysis and Design of a High-Gain 100-180-GHz Differential Power Amplifier in 130nm SiGe BiCMOS

Faisal Ahmed, Muhammad Furqan, Klaus Aufinger, Andreas Stelzer

Department of RF-Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1231-1239
Number of pages	8
Journal	International Journal of Microwave and Wireless Technologies
Issue number	6
DOIs	https://doi.org/10.1017/S1759078716001458
Publication status	Published - 2017

Fields of science

202019 High frequency engineering
202029 Microwave engineering
202033 Radar technology
202038 Telecommunications
202 Electrical Engineering, Electronics, Information Engineering
202030 Communication engineering
202037 Signal processing

JKU Focus areas

Mechatronics and Information Processing

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10.1017/S1759078716001458

Cite this

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title = "Analysis and Design of a High-Gain 100-180-GHz Differential Power Amplifier in 130nm SiGe BiCMOS",

author = "Faisal Ahmed and Muhammad Furqan and Klaus Aufinger and Andreas Stelzer",

year = "2017",

doi = "10.1017/S1759078716001458",

language = "English",

pages = "1231--1239",

journal = "International Journal of Microwave and Wireless Technologies",

issn = "1759-0795",

publisher = "Cambridge University Press",

number = "6",

}

TY - JOUR

T1 - Analysis and Design of a High-Gain 100-180-GHz Differential Power Amplifier in 130nm SiGe BiCMOS

AU - Ahmed, Faisal

AU - Furqan, Muhammad

AU - Aufinger, Klaus

AU - Stelzer, Andreas

PY - 2017

Y1 - 2017

UR - https://www.scopus.com/pages/publications/85012110197

U2 - 10.1017/S1759078716001458

DO - 10.1017/S1759078716001458

M3 - Article

SN - 1759-0795

SP - 1231

EP - 1239

JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

IS - 6

ER -

Analysis and Design of a High-Gain 100-180-GHz Differential Power Amplifier in 130nm SiGe BiCMOS

Fields of science

JKU Focus areas

Access to Document

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