An Integrated 20 GHz SiGe Bipolar Differential Oscillator with High Tuning Range

K. Ettinger; Marcus Bergmair; Harald Pretl; Wolfgang Thomann; Josef Fenk; Robert Weigel

An Integrated 20 GHz SiGe Bipolar Differential Oscillator with High Tuning Range

K. Ettinger
, Marcus Bergmair
, Harald Pretl
, Wolfgang Thomann
, Josef Fenk
, Robert Weigel

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Abstract

A fully integrated, differential LC oscillator manufactured in Infineons B7HF SiGe bipolar technology with an fT and fmax of 75 GHz is presented. The oscillator features a tank consisting of on-chip stripline inductors and the parasitic capacitances of the oscillator transistors. A tuning range of 14-21.5 GHz over bias current is achieved. The output buffer is inductively coupled to the tank. Total current consumption including the buffer is 13 mA from a 3 V supply at the maximum oscillation frequency of 21.5 GHz. The measured phase-noise at 1 MHz offset is -85 dBc/Hz at a core bias current of 7 mA.

Original language	English
Title of host publication	Proceedings of the 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Number of pages	3
Publication status	Published - Sept 2000

Fields of science

103011 Semiconductor physics
202018 Semiconductor electronics
202019 High frequency engineering
202028 Microelectronics

Cite this

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title = "An Integrated 20 GHz SiGe Bipolar Differential Oscillator with High Tuning Range",

abstract = "A fully integrated, differential LC oscillator manufactured in Infineons B7HF SiGe bipolar technology with an fT and fmax of 75 GHz is presented. The oscillator features a tank consisting of on-chip stripline inductors and the parasitic capacitances of the oscillator transistors. A tuning range of 14-21.5 GHz over bias current is achieved. The output buffer is inductively coupled to the tank. Total current consumption including the buffer is 13 mA from a 3 V supply at the maximum oscillation frequency of 21.5 GHz. The measured phase-noise at 1 MHz offset is -85 dBc/Hz at a core bias current of 7 mA.",

author = "K. Ettinger and Marcus Bergmair and Harald Pretl and Wolfgang Thomann and Josef Fenk and Robert Weigel",

year = "2000",

month = sep,

language = "English",

isbn = "0-7803-6384-1",

booktitle = "Proceedings of the 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)",

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T1 - An Integrated 20 GHz SiGe Bipolar Differential Oscillator with High Tuning Range

AU - Ettinger, K.

AU - Bergmair, Marcus

AU - Pretl, Harald

AU - Thomann, Wolfgang

AU - Fenk, Josef

AU - Weigel, Robert

PY - 2000/9

Y1 - 2000/9

N2 - A fully integrated, differential LC oscillator manufactured in Infineons B7HF SiGe bipolar technology with an fT and fmax of 75 GHz is presented. The oscillator features a tank consisting of on-chip stripline inductors and the parasitic capacitances of the oscillator transistors. A tuning range of 14-21.5 GHz over bias current is achieved. The output buffer is inductively coupled to the tank. Total current consumption including the buffer is 13 mA from a 3 V supply at the maximum oscillation frequency of 21.5 GHz. The measured phase-noise at 1 MHz offset is -85 dBc/Hz at a core bias current of 7 mA.

AB - A fully integrated, differential LC oscillator manufactured in Infineons B7HF SiGe bipolar technology with an fT and fmax of 75 GHz is presented. The oscillator features a tank consisting of on-chip stripline inductors and the parasitic capacitances of the oscillator transistors. A tuning range of 14-21.5 GHz over bias current is achieved. The output buffer is inductively coupled to the tank. Total current consumption including the buffer is 13 mA from a 3 V supply at the maximum oscillation frequency of 21.5 GHz. The measured phase-noise at 1 MHz offset is -85 dBc/Hz at a core bias current of 7 mA.

M3 - Conference proceedings

SN - 0-7803-6384-1

BT - Proceedings of the 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

ER -