Air stability of C60 based n-type OFETs

R. Ahmed; Clemens Peter Simbrunner; Günther Schwabegger; M. A. Baig; Helmut Sitter

doi:10.1016/j.synthmet.2013.12.007

Air stability of C60 based n-type OFETs

R. Ahmed, Clemens Peter Simbrunner, Günther Schwabegger, M. A. Baig, Helmut Sitter

Department of Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Air stability of C60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with singlesingle layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices.

Original language	English
Pages (from-to)	136–139
Number of pages	4
Journal	Synthetic Metals
Volume	188
DOIs	https://doi.org/10.1016/j.synthmet.2013.12.007
Publication status	Published - Feb 2014

Fields of science

210006 Nanotechnology
103 Physics, Astronomy
103011 Semiconductor physics
103018 Materials physics
202032 Photovoltaics
103009 Solid state physics
103017 Magnetism

JKU Focus areas

Engineering and Natural Sciences (in general)

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10.1016/j.synthmet.2013.12.007

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title = "Air stability of C60 based n-type OFETs",

abstract = "Air stability of C60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with singlesingle layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices.",

author = "R. Ahmed and Simbrunner, \{Clemens Peter\} and G{\"u}nther Schwabegger and Baig, \{M. A.\} and Helmut Sitter",

year = "2014",

month = feb,

doi = "10.1016/j.synthmet.2013.12.007",

language = "English",

volume = "188",

pages = "136–139",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier",

}

TY - JOUR

T1 - Air stability of C60 based n-type OFETs

AU - Ahmed, R.

AU - Simbrunner, Clemens Peter

AU - Schwabegger, Günther

AU - Baig, M. A.

AU - Sitter, Helmut

PY - 2014/2

Y1 - 2014/2

N2 - Air stability of C60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with singlesingle layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices.

AB - Air stability of C60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with singlesingle layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices.

UR - http://www.sciencedirect.com/science/article/pii/S0379677913005948

U2 - 10.1016/j.synthmet.2013.12.007

DO - 10.1016/j.synthmet.2013.12.007

M3 - Article

SN - 0379-6779

VL - 188

SP - 136

EP - 139

JO - Synthetic Metals

JF - Synthetic Metals

ER -

Air stability of C60 based n-type OFETs

Abstract

Fields of science

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