Abstract
The influence of wafer bonding and post-bond
annealing conditions on the (cavity) void size and distribution
was investigated theoretically and verified experimentally.
Based on Cu–Cu thermo-compression bonding at
175°C for 30 min and subsequent annealing at 200°C for
1, 6 and 24 h, respectively, in both cases the total void
surface reduces with the duration of the heat treatment,
showing good correlation between theory and experiment.
However, the experimental results revealed that the average
void size increases while voids number decreases,
which is a deviation from the prediction of the physical model.
| Original language | English |
|---|---|
| Pages (from-to) | 815-822 |
| Number of pages | 8 |
| Journal | Microsystem Technologies |
| Volume | 24 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2018 |
Fields of science
- 210006 Nanotechnology
- 103 Physics, Astronomy
- 103020 Surface physics
- 103021 Optics
JKU Focus areas
- Sustainable Development: Responsible Technologies and Management