A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

Andreas Fuchsberger; L. Wind; Daniele Nazzari; A. Dobler; Johannes Aberl; Enrique Prado-Navarrete; Moritz Brehm; L. Vogl; P. Schweizer; Sebastian Lellig; X. Maeder; Masar Sistani; W. M. Weber

doi:10.1109/JEDS.2024.3432971

A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

Andreas Fuchsberger, L. Wind, Daniele Nazzari, A. Dobler, Johannes Aberl, Enrique Prado-Navarrete, Moritz Brehm, L. Vogl, P. Schweizer, Sebastian Lellig, X. Maeder, Masar Sistani, W. M. Weber

Department of Semiconductor Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	541-547
Number of pages	7
Journal	IEEE Journal of the Electron Devices Society
Volume	12
DOIs	https://doi.org/10.1109/JEDS.2024.3432971
Publication status	Published - 2024

Fields of science

103 Physics, Astronomy

JKU Focus areas

Digital Transformation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/JEDS.2024.3432971

Cite this

Fuchsberger, A., Wind, L., Nazzari, D., Dobler, A., Aberl, J., Prado-Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder, X., Sistani, M., & Weber, W. M. (2024). A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance. IEEE Journal of the Electron Devices Society, 12, 541-547. https://doi.org/10.1109/JEDS.2024.3432971

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title = "A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance",

author = "Andreas Fuchsberger and L. Wind and Daniele Nazzari and A. Dobler and Johannes Aberl and Enrique Prado-Navarrete and Moritz Brehm and L. Vogl and P. Schweizer and Sebastian Lellig and X. Maeder and Masar Sistani and Weber, \{W. M.\}",

year = "2024",

doi = "10.1109/JEDS.2024.3432971",

language = "English",

volume = "12",

pages = "541--547",

journal = "IEEE Journal of the Electron Devices Society",

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TY - JOUR

T1 - A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

AU - Fuchsberger, Andreas

AU - Wind, L.

AU - Nazzari, Daniele

AU - Dobler, A.

AU - Aberl, Johannes

AU - Prado-Navarrete, Enrique

AU - Brehm, Moritz

AU - Vogl, L.

AU - Schweizer, P.

AU - Lellig, Sebastian

AU - Maeder, X.

AU - Sistani, Masar

AU - Weber, W. M.

PY - 2024

Y1 - 2024

UR - https://ieeexplore.ieee.org/abstract/document/10608155

UR - https://www.scopus.com/pages/publications/85199327642

U2 - 10.1109/JEDS.2024.3432971

DO - 10.1109/JEDS.2024.3432971

M3 - Article

VL - 12

SP - 541

EP - 547

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

Fields of science

JKU Focus areas

UN SDGs

Access to Document

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