TY - GEN
T1 - A Novel Characterization Method for Thermal Thin-Film Properties Applied to PECVD Silicon Nitride
AU - Beigelbeck, Roman
AU - Kuntner, Jochen
AU - Kohl, Franz
AU - Keplinger, Franz
AU - Jakoby, Bernhard
PY - 2007/10
Y1 - 2007/10
N2 - Design, simulation, and optimization of micromachined sensor devices often require accurate knowledge of thermal thin-film properties, e. g., for PECVD-Si3N4. These thermal parameters can differ considerably from those stated for bulk material and they are typically process-dependent. We developed a novel method to determine the thermal conductivity as well as the heat capacity of such thin-films based on a micromachined cantilever device. In this contribution, we describe a newly devised test device together with the associated extraction procedure and report on an experimental verification for a dielectricPECVD silicon nitride thin-film.
AB - Design, simulation, and optimization of micromachined sensor devices often require accurate knowledge of thermal thin-film properties, e. g., for PECVD-Si3N4. These thermal parameters can differ considerably from those stated for bulk material and they are typically process-dependent. We developed a novel method to determine the thermal conductivity as well as the heat capacity of such thin-films based on a micromachined cantilever device. In this contribution, we describe a newly devised test device together with the associated extraction procedure and report on an experimental verification for a dielectricPECVD silicon nitride thin-film.
UR - http://www.scopus.com/inward/record.url?scp=42149181214&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2007.4388557
DO - 10.1109/ICSENS.2007.4388557
M3 - Conference proceedings
SN - 1424412617
SN - 9781424412617
T3 - Proceedings of IEEE Sensors
SP - 938
EP - 941
BT - IEEE Sensors 2007 Proceedings
A2 - IEEE, null
ER -