A Measurement Method to Mitigate Temperature Effects in Nanometer CMOS RF Power Amplifiers

Patrick Oßmann; Jörg Fuhrmann; José Moreira; Harald Pretl; Andreas Springer

doi:10.1109/Austrochip.2014.6946320

A Measurement Method to Mitigate Temperature Effects in Nanometer CMOS RF Power Amplifiers

Patrick Oßmann
, Jörg Fuhrmann
, José Moreira
, Harald Pretl
, Andreas Springer

Department of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Abstract

We present a measurement method to properly take temperature effects in deep nanometer complementary metal-oxide semiconductor (CMOS) power amplifiers (PAs) into account. By means of pulsed radio frequency (RF) power measurements the amplifier performance degradation caused by semiconductor self-heating is analyzed and the circuit's thermal time constant is derived. The proposed measurement technique supports automated controlling of equipment and automated data extraction using a Matlab framework. For a 28nm CMOS PA accuracy improvement between simulated and measured data of 5% in terms of power-added efficiency (PAE) and 2.2 dB in terms of saturated output power is achieved. When applying the proposed measurement technique the active die junction temperature reduces from 105°C to 45°C for saturated operation.

Original language	English
Title of host publication	Microelectronics (Austrochip), 22nd Austrian Workshop on
Editors	Michael Hutter
Pages	53-57
Number of pages	5
ISBN (Electronic)	9781479972432
DOIs	https://doi.org/10.1109/Austrochip.2014.6946320
Publication status	Published - Oct 2014

Fields of science

202019 High frequency engineering
202038 Telecommunications
202 Electrical Engineering, Electronics, Information Engineering

JKU Focus areas

Mechatronics and Information Processing

Access to Document

10.1109/Austrochip.2014.6946320

Cite this

@inproceedings{2118178da7a6477f92d6066c0897d780,

title = "A Measurement Method to Mitigate Temperature Effects in Nanometer CMOS RF Power Amplifiers",

abstract = "We present a measurement method to properly take temperature effects in deep nanometer complementary metal-oxide semiconductor (CMOS) power amplifiers (PAs) into account. By means of pulsed radio frequency (RF) power measurements the amplifier performance degradation caused by semiconductor self-heating is analyzed and the circuit's thermal time constant is derived. The proposed measurement technique supports automated controlling of equipment and automated data extraction using a Matlab framework. For a 28nm CMOS PA accuracy improvement between simulated and measured data of 5\% in terms of power-added efficiency (PAE) and 2.2 dB in terms of saturated output power is achieved. When applying the proposed measurement technique the active die junction temperature reduces from 105°C to 45°C for saturated operation.",

author = "Patrick O{\ss}mann and J{\"o}rg Fuhrmann and Jos{\'e} Moreira and Harald Pretl and Andreas Springer",

year = "2014",

month = oct,

doi = "10.1109/Austrochip.2014.6946320",

language = "English",

pages = "53--57",

editor = "Michael Hutter",

booktitle = "Microelectronics (Austrochip), 22nd Austrian Workshop on",

}

TY - GEN

T1 - A Measurement Method to Mitigate Temperature Effects in Nanometer CMOS RF Power Amplifiers

AU - Oßmann, Patrick

AU - Fuhrmann, Jörg

AU - Moreira, José

AU - Pretl, Harald

AU - Springer, Andreas

PY - 2014/10

Y1 - 2014/10

N2 - We present a measurement method to properly take temperature effects in deep nanometer complementary metal-oxide semiconductor (CMOS) power amplifiers (PAs) into account. By means of pulsed radio frequency (RF) power measurements the amplifier performance degradation caused by semiconductor self-heating is analyzed and the circuit's thermal time constant is derived. The proposed measurement technique supports automated controlling of equipment and automated data extraction using a Matlab framework. For a 28nm CMOS PA accuracy improvement between simulated and measured data of 5% in terms of power-added efficiency (PAE) and 2.2 dB in terms of saturated output power is achieved. When applying the proposed measurement technique the active die junction temperature reduces from 105°C to 45°C for saturated operation.

AB - We present a measurement method to properly take temperature effects in deep nanometer complementary metal-oxide semiconductor (CMOS) power amplifiers (PAs) into account. By means of pulsed radio frequency (RF) power measurements the amplifier performance degradation caused by semiconductor self-heating is analyzed and the circuit's thermal time constant is derived. The proposed measurement technique supports automated controlling of equipment and automated data extraction using a Matlab framework. For a 28nm CMOS PA accuracy improvement between simulated and measured data of 5% in terms of power-added efficiency (PAE) and 2.2 dB in terms of saturated output power is achieved. When applying the proposed measurement technique the active die junction temperature reduces from 105°C to 45°C for saturated operation.

UR - https://www.scopus.com/pages/publications/84914170700

U2 - 10.1109/Austrochip.2014.6946320

DO - 10.1109/Austrochip.2014.6946320

M3 - Conference proceedings

SP - 53

EP - 57

BT - Microelectronics (Austrochip), 22nd Austrian Workshop on

A2 - Hutter, Michael

ER -

A Measurement Method to Mitigate Temperature Effects in Nanometer CMOS RF Power Amplifiers

Abstract

Fields of science

JKU Focus areas

Access to Document

Other files and links

Cite this