A Matched InGaAs Detector Diode for Ka-Band Radar Front-End

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Abstract

Experimental results with a 35 GHz Doppler radar unit are reported in this contribution. The measurement setup consists of a RF-front-end, signal conditioning, signal processing and a display unit. The sensitivity of the receiving part has been enhanced by matching a recently developed InGaAs-detector diode with the characteristic impedance of the microstrip transmission line.
Original languageEnglish
Title of host publicationDigest to the 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '98), May 24-27, 1998, Zeuthen/Berlin
Pages135-136
Number of pages2
Publication statusPublished - May 1998

Fields of science

  • 202018 Semiconductor electronics
  • 202019 High frequency engineering
  • 202028 Microelectronics

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