A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET

Matthias Eberlein; Harald Pretl

A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET

Matthias Eberlein, Harald Pretl

Department of Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Abstract

This paper presents a new concept for sub- bandgap circuits, based on direct generation of PTAT current with larger and adjustable temperature coefficient. The reference voltage is generated inside the feedback loop, which facilitates good supply rejection, low-noise and high precision performance. A 3σ-spread of only ±0.64% across split-lots was observed in a 16nm FinFET process on 4400µm2, without trimming or any switching techniques. By using NPN bipolar devices, noise levels of ~130nV/sqrt(Hz) at 1kHz can be achieved at 125µA power drain. Different configurations are explained, which allow flexible reference levels or very low supply voltages of < 0.85V.

Original language	English
Title of host publication	A-SSCC 2019 Proceedings
Number of pages	4
Publication status	Published - Nov 2019

Fields of science

102 Computer Sciences
202 Electrical Engineering, Electronics, Information Engineering

Christian Doppler Laboratory for Digitally Assisted RF Transceivers for Future Mobile Communications
Auer, C. (Researcher), Buckel, T. (Researcher), Gebhard, A. (Researcher), Hager, E. (Researcher), Hamidovic, D. (Researcher), Hofstadler, M. (Researcher), Markovic, J. (Researcher), Motz, C. (Researcher), Nyamangoudar, R. (Researcher), Paireder, T. (Researcher), Ploder, O. (Researcher), Preissl, C. (Researcher), Pretl, H. (Researcher), Preyler, P. (Researcher), Pühringer, B. (Researcher), Huemer, M. (PI) & Springer, A. (PI)
01.01.2017 → 31.12.2024
Project: Funded research › Other sponsors

Cite this

@inproceedings{443c4e98a2604c0fae527d35fdfa7ac7,

title = "A Low-Noise Sub-Bandgap Reference with a ±0.64\% Untrimmed Precision in 16nm FinFET",

abstract = "This paper presents a new concept for sub- bandgap circuits, based on direct generation of PTAT current with larger and adjustable temperature coefficient. The reference voltage is generated inside the feedback loop, which facilitates good supply rejection, low-noise and high precision performance. A 3σ-spread of only ±0.64\% across split-lots was observed in a 16nm FinFET process on 4400µm2, without trimming or any switching techniques. By using NPN bipolar devices, noise levels of \textasciitilde{}130nV/sqrt(Hz) at 1kHz can be achieved at 125µA power drain. Different configurations are explained, which allow flexible reference levels or very low supply voltages of < 0.85V.",

author = "Matthias Eberlein and Harald Pretl",

year = "2019",

month = nov,

language = "English",

booktitle = "A-SSCC 2019 Proceedings",

}

TY - GEN

T1 - A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET

AU - Eberlein, Matthias

AU - Pretl, Harald

PY - 2019/11

Y1 - 2019/11

N2 - This paper presents a new concept for sub- bandgap circuits, based on direct generation of PTAT current with larger and adjustable temperature coefficient. The reference voltage is generated inside the feedback loop, which facilitates good supply rejection, low-noise and high precision performance. A 3σ-spread of only ±0.64% across split-lots was observed in a 16nm FinFET process on 4400µm2, without trimming or any switching techniques. By using NPN bipolar devices, noise levels of ~130nV/sqrt(Hz) at 1kHz can be achieved at 125µA power drain. Different configurations are explained, which allow flexible reference levels or very low supply voltages of < 0.85V.

AB - This paper presents a new concept for sub- bandgap circuits, based on direct generation of PTAT current with larger and adjustable temperature coefficient. The reference voltage is generated inside the feedback loop, which facilitates good supply rejection, low-noise and high precision performance. A 3σ-spread of only ±0.64% across split-lots was observed in a 16nm FinFET process on 4400µm2, without trimming or any switching techniques. By using NPN bipolar devices, noise levels of ~130nV/sqrt(Hz) at 1kHz can be achieved at 125µA power drain. Different configurations are explained, which allow flexible reference levels or very low supply voltages of < 0.85V.

M3 - Conference proceedings

BT - A-SSCC 2019 Proceedings

ER -

A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET

Abstract

Fields of science

Projects

Christian Doppler Laboratory for Digitally Assisted RF Transceivers for Future Mobile Communications

Cite this