Abstract
This paper investigates the performance of two differential power amplifiers that were designed for automotive radar applications at 79 GHz and fabricated in two different SiGe:C processes. One process is Infineon's high-speed SiGe:C commercial process B7HF200, and the other one is an advanced generation derived from it. They provide heterojunction bipolar transistors with maximum oscillation frequencies of 250 and 380 GHz, respectively. The performance of the two amplifiers is compared in terms of linearity, maximum saturated output power, power gain, power added efficiency and temperature stability.
| Original language | English |
|---|---|
| Title of host publication | Proc. of the 7th German Microwave Conference (GeMiC) |
| Pages | 1 - 3 |
| Number of pages | 3 |
| Publication status | Published - Mar 2012 |
Fields of science
- 202019 High frequency engineering
- 202029 Microwave engineering
- 202033 Radar technology
JKU Focus areas
- Mechatronics and Information Processing