A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET

Matthias Eberlein; Georgios Panagopoulos; Harald Pretl

doi:10.1109/ASSCC.2018.8579306

A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET

Matthias Eberlein, Georgios Panagopoulos, Harald Pretl

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Original language	English
Title of host publication	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	99-102
Number of pages	4
ISBN (Electronic)	9781538664124
DOIs	https://doi.org/10.1109/ASSCC.2018.8579306
Publication status	Published - 14 Dec 2018
Externally published	Yes
Event	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Tainan, Taiwan, Province of China Duration: 05 Nov 2018 → 07 Nov 2018

Publication series

Name	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

Conference

Conference	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018
Country/Territory	Taiwan, Province of China
City	Tainan
Period	05.11.2018 → 07.11.2018

Fields of science

202028 Microelectronics

Access to Document

10.1109/ASSCC.2018.8579306

Cite this

Eberlein, M., Panagopoulos, G., & Pretl, H. (2018). A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET. In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings (pp. 99-102). Article 8579306 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2018.8579306

Eberlein, Matthias ; Panagopoulos, Georgios ; Pretl, Harald. / A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET. 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 99-102 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

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title = "A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET",

keywords = "Bandgap voltage reference, bulk-diode, FinFet process, switched-capacitor",

author = "Matthias Eberlein and Georgios Panagopoulos and Harald Pretl",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 ; Conference date: 05-11-2018 Through 07-11-2018",

year = "2018",

month = dec,

day = "14",

doi = "10.1109/ASSCC.2018.8579306",

language = "English",

series = "2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "99--102",

booktitle = "2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings",

}

Eberlein, M, Panagopoulos, G & Pretl, H 2018, A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET. in 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings., 8579306, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 99-102, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018, Tainan, Taiwan, Province of China, 05.11.2018. https://doi.org/10.1109/ASSCC.2018.8579306

A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET. / Eberlein, Matthias; Panagopoulos, Georgios; Pretl, Harald.
2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 99-102 8579306 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

TY - GEN

T1 - A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET

AU - Eberlein, Matthias

AU - Panagopoulos, Georgios

AU - Pretl, Harald

PY - 2018/12/14

Y1 - 2018/12/14

KW - Bandgap voltage reference

KW - bulk-diode

KW - FinFet process

KW - switched-capacitor

UR - http://www.scopus.com/inward/record.url?scp=85060489320&partnerID=8YFLogxK

U2 - 10.1109/ASSCC.2018.8579306

DO - 10.1109/ASSCC.2018.8579306

M3 - Conference proceedings

AN - SCOPUS:85060489320

T3 - 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

SP - 99

EP - 102

BT - 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018

Y2 - 5 November 2018 through 7 November 2018

ER -

Eberlein M, Panagopoulos G, Pretl H. A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET. In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 99-102. 8579306. (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). doi: 10.1109/ASSCC.2018.8579306

A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET

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Conference

Fields of science

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