Abstract
This paper presents a frequency-modulated
continuous-wave (FMCW) radar operating at 120 GHz. It was
built with Silicon-Germanium (SiGe) chips that employ HBTs
with 320 GHz fmax. The chipset comprises a fundamental-wave
signal-generation chip with a voltage-controlled oscillator (VCO)
that provides frequencies between 114GHz and 130GHz and a
corresponding dual transceiver (TRX) chip with monostatic and
quasi-monostatic TRX cells. The single-stage cascode amplifiers
employed in the TRX chip were characterized in separate test
chips and yielded peak small-signal gains of approximately
15 dB. Finally, a quasi-monostatic two-channel FMCW radar
front end with off-chip differential microstrip-antennas was built
on RF substrate. FMCW radar measurements with frequency
chirps from 119GHz to 122GHz verified the functionality of
the designed radar sensor.
| Original language | English |
|---|---|
| Title of host publication | Proc. of the 41st European Microwave Week (EuMC 2011) |
| Pages | 519-522 |
| Number of pages | 4 |
| Publication status | Published - Oct 2011 |
Fields of science
- 202019 High frequency engineering
- 202033 Radar technology
JKU Focus areas
- Mechatronics and Information Processing
Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver