A 0.5-V 180-nm CMOS Switched-Capacitor Temperature Sensor With 319 nJ/measurement

Markus Stadelmayer; Thomas Faseth; Harald Pretl

doi:10.1109/NEWCAS44328.2019.8961301

A 0.5-V 180-nm CMOS Switched-Capacitor Temperature Sensor With 319 nJ/measurement

Markus Stadelmayer, Thomas Faseth, Harald Pretl

Department of Energy-Efficient Analog Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference proceedings › peer-review

Abstract

In this paper an ultra-low-power switched-capacitor (SC) temperature sensor realized in a 180nm CMOS process is introduced. The sensor is operational at supply voltages down to 0.5V, equivalent to the threshold voltages of the available MOS transistors. Using bipolar transistors for reference and temperature dependent voltage generation in a SC band-gap core, the overall temperature sensor is formed by a combination of the band-gap with a time-discrete pseudo-differential singleslope analog-to-digital converter. The temperature sensor has a power consumption of 2.62μW (4.56μW) including all biasing and clock generation at supply voltages of 0.5V (0.8V), and achieves an estimated 3 sigma accuracy of 2.42°C (1.36°C) using a two-point trim for the temperature range of 10°C to 100°C (−20°C to 100°C). Besides the temperature sensing functionality, the presented circuitry additionally provides a 24kHz clock signal and stable reference voltage for other circuit blocks.

Original language	English
Title of host publication	NEWCAS 2019 (IEEE)
DOIs	https://doi.org/10.1109/NEWCAS44328.2019.8961301
Publication status	Published - Jun 2019

Fields of science

102 Computer Sciences
202 Electrical Engineering, Electronics, Information Engineering

JKU Focus areas

Digital Transformation

Access to Document

10.1109/NEWCAS44328.2019.8961301

Cite this

@inproceedings{182a36b7a1694518b150b52be6215de3,

title = "A 0.5-V 180-nm CMOS Switched-Capacitor Temperature Sensor With 319 nJ/measurement",

abstract = "In this paper an ultra-low-power switched-capacitor (SC) temperature sensor realized in a 180nm CMOS process is introduced. The sensor is operational at supply voltages down to 0.5V, equivalent to the threshold voltages of the available MOS transistors. Using bipolar transistors for reference and temperature dependent voltage generation in a SC band-gap core, the overall temperature sensor is formed by a combination of the band-gap with a time-discrete pseudo-differential singleslope analog-to-digital converter. The temperature sensor has a power consumption of 2.62μW (4.56μW) including all biasing and clock generation at supply voltages of 0.5V (0.8V), and achieves an estimated 3 sigma accuracy of 2.42°C (1.36°C) using a two-point trim for the temperature range of 10°C to 100°C (−20°C to 100°C). Besides the temperature sensing functionality, the presented circuitry additionally provides a 24kHz clock signal and stable reference voltage for other circuit blocks.",

author = "Markus Stadelmayer and Thomas Faseth and Harald Pretl",

year = "2019",

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doi = "10.1109/NEWCAS44328.2019.8961301",

language = "English",

booktitle = "NEWCAS 2019 (IEEE)",

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AU - Stadelmayer, Markus

AU - Faseth, Thomas

AU - Pretl, Harald

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N2 - In this paper an ultra-low-power switched-capacitor (SC) temperature sensor realized in a 180nm CMOS process is introduced. The sensor is operational at supply voltages down to 0.5V, equivalent to the threshold voltages of the available MOS transistors. Using bipolar transistors for reference and temperature dependent voltage generation in a SC band-gap core, the overall temperature sensor is formed by a combination of the band-gap with a time-discrete pseudo-differential singleslope analog-to-digital converter. The temperature sensor has a power consumption of 2.62μW (4.56μW) including all biasing and clock generation at supply voltages of 0.5V (0.8V), and achieves an estimated 3 sigma accuracy of 2.42°C (1.36°C) using a two-point trim for the temperature range of 10°C to 100°C (−20°C to 100°C). Besides the temperature sensing functionality, the presented circuitry additionally provides a 24kHz clock signal and stable reference voltage for other circuit blocks.

AB - In this paper an ultra-low-power switched-capacitor (SC) temperature sensor realized in a 180nm CMOS process is introduced. The sensor is operational at supply voltages down to 0.5V, equivalent to the threshold voltages of the available MOS transistors. Using bipolar transistors for reference and temperature dependent voltage generation in a SC band-gap core, the overall temperature sensor is formed by a combination of the band-gap with a time-discrete pseudo-differential singleslope analog-to-digital converter. The temperature sensor has a power consumption of 2.62μW (4.56μW) including all biasing and clock generation at supply voltages of 0.5V (0.8V), and achieves an estimated 3 sigma accuracy of 2.42°C (1.36°C) using a two-point trim for the temperature range of 10°C to 100°C (−20°C to 100°C). Besides the temperature sensing functionality, the presented circuitry additionally provides a 24kHz clock signal and stable reference voltage for other circuit blocks.

U2 - 10.1109/NEWCAS44328.2019.8961301

DO - 10.1109/NEWCAS44328.2019.8961301

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