TY - GEN
T1 - 125 to 181 GHz fundamental-wave VCO chips in SiGe technology
AU - Jahn, Martin
AU - Aufinger, Klaus
AU - Meister, Thomas
AU - Stelzer, Andreas
PY - 2012/6
Y1 - 2012/6
N2 - This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170GHz (D-band). The fastest VCO operates at up to 181GHz in combination with the prescaler. The VCOs run on 1.8V, draw ~35 mA, and achieve a single-sideband phase noise ranging from -92 to -82 dBc/Hz at 1MHz offset frequency. Power consumption of the high-speed frequency divider in the first prescaler stage is 70mW. The circuits are based on an Infineon SiGe technology, which features HBTs with an fmax of 340 GHz.
AB - This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170GHz (D-band). The fastest VCO operates at up to 181GHz in combination with the prescaler. The VCOs run on 1.8V, draw ~35 mA, and achieve a single-sideband phase noise ranging from -92 to -82 dBc/Hz at 1MHz offset frequency. Power consumption of the high-speed frequency divider in the first prescaler stage is 70mW. The circuits are based on an Infineon SiGe technology, which features HBTs with an fmax of 340 GHz.
UR - https://www.scopus.com/pages/publications/84866611444
U2 - 10.1109/RFIC.2012.6242238
DO - 10.1109/RFIC.2012.6242238
M3 - Conference proceedings
SN - 9781467304146
T3 - Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
SP - 87
EP - 90
BT - Radio Frequency Integrated Circuits Symposium (RFIC)
ER -