0.3-THz SiGe-Based High-Efficiency Push-Push VCOs With >1-mW Peak Output Power Employing Common-Mode Impedance Enhancement

Faisal Ahmed; Muhammad Furqan; Bernd Heinemann; Andreas Stelzer

doi:10.1109/TMTT.2017.2767593

0.3-THz SiGe-Based High-Efficiency Push-Push VCOs With >1-mW Peak Output Power Employing Common-Mode Impedance Enhancement

Faisal Ahmed, Muhammad Furqan, Bernd Heinemann, Andreas Stelzer

Department of RF-Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1384-1398
Number of pages	15
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	66
Issue number	3
DOIs	https://doi.org/10.1109/TMTT.2017.2767593
Publication status	Published - Mar 2018

Fields of science

202019 High frequency engineering
202029 Microwave engineering
202033 Radar technology
202 Electrical Engineering, Electronics, Information Engineering

JKU Focus areas

Mechatronics and Information Processing

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10.1109/TMTT.2017.2767593

Cite this

@article{8e31b20400d14292b5dab4a12fd99681,

title = "0.3-THz SiGe-Based High-Efficiency Push-Push VCOs With >1-mW Peak Output Power Employing Common-Mode Impedance Enhancement",

keywords = "Heterojunction bipolar transistor (HBT), millimeter wave (mm-wave), SiGe BiCMOS, terahertz (THz), voltage-controlled oscillators (VCOs), wide tuning range",

author = "Faisal Ahmed and Muhammad Furqan and Bernd Heinemann and Andreas Stelzer",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

month = mar,

doi = "10.1109/TMTT.2017.2767593",

language = "English",

volume = "66",

pages = "1384--1398",

journal = "IEEE Transactions on Microwave Theory and Techniques",

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TY - JOUR

T1 - 0.3-THz SiGe-Based High-Efficiency Push-Push VCOs With >1-mW Peak Output Power Employing Common-Mode Impedance Enhancement

AU - Ahmed, Faisal

AU - Furqan, Muhammad

AU - Heinemann, Bernd

AU - Stelzer, Andreas

PY - 2018/3

Y1 - 2018/3

KW - Heterojunction bipolar transistor (HBT)

KW - millimeter wave (mm-wave)

KW - SiGe BiCMOS

KW - terahertz (THz)

KW - voltage-controlled oscillators (VCOs)

KW - wide tuning range

UR - http://ieeexplore.ieee.org/document/8100752/

UR - https://www.scopus.com/pages/publications/85033690499

U2 - 10.1109/TMTT.2017.2767593

DO - 10.1109/TMTT.2017.2767593

M3 - Article

SN - 0018-9480

VL - 66

SP - 1384

EP - 1398

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 3

ER -

0.3-THz SiGe-Based High-Efficiency Push-Push VCOs With >1-mW Peak Output Power Employing Common-Mode Impedance Enhancement

Fields of science

JKU Focus areas

Access to Document

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