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D-DOT FET - Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits

Project: Funded researchEU - European Union

Project Details

StatusFinished
Effective start/end date01.10.200530.09.2009

Collaborative partners

Fields of science

  • 103009 Solid state physics
  • 103018 Materials physics
  • 103 Physics, Astronomy
  • 103040 Photonics
  • 202032 Photovoltaics
  • 210006 Nanotechnology
  • 103011 Semiconductor physics
  • 103017 Magnetism

JKU Focus areas

  • Sustainable Development: Responsible Technologies and Management
  • Digital Transformation
  • Phonon strain shift coefficients in Si1-xGex alloys

    Pezzoli, F., Bonera, E., Grilli, E., Guzzi, M., Sanguinetti, S., Chrastina, D., Isella, G., von Känel, H., Wintersberger, E., Stangl, J. & Bauer, G., 2008, In: Journal of Applied Physics. 103, 9, p. 093521 4 p., 093521.

    Research output: Contribution to journalArticlepeer-review