Research output per year
Research output per year
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Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms
Fuchsberger, A., Wind, L., Nazzari, D., Aberl, J., Prado-Navarrete, E., Brehm, M., Hartmann, J.-M., Fournel, F., Vogl, L., Schweizer, P., Minor, A. M., Sistani, M. & Weber, W. M., Jun 2025, In: Solid-State Electronics. 226, 7 p., 109055.Research output: Contribution to journal › Article › peer-review
Open Access -
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
Salomon, A., Aberl, J., Vukusic, L., Prado-Navarrete, E., Marböck, J., Enriques, D. H., Schuster, J., Martinez Reyna, K., Groiß, H., Fromherz, T. & Brehm, M., Sept 2024, In: ArXiv. 30 p.Research output: Contribution to journal › Article › peer-review
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All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy
Aberl, J., Prado-Navarrete, E., Karaman, M., Haya Enriquez, D., Wilflingseder, C., Salomon, A., Primetzhofer, D., Schubert, M. A., Capellini, G., Fromherz, T., Deák, P., Udvarhelyi, P., Li, S., Gali, Á. & Brehm, M., 27 Nov 2024, In: Adv. Mater.. 36, 48, p. 2408424 9 p., 2408424.Research output: Contribution to journal › Article › peer-review
Open Access -
A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance
Fuchsberger, A., Wind, L., Nazzari, D., Dobler, A., Aberl, J., Prado-Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder, X., Sistani, M. & Weber, W. M., 2024, In: IEEE Journal of the Electron Devices Society. 12, p. 541-547 7 p.Research output: Contribution to journal › Article › peer-review
Open Access -
A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States
Fuchsberger, A., Wind, L., Nazzari, D., Kühberger, L., Popp, D., Aberl, J., Prado-Navarrete, E., Brehm, M., Vogl, L., Schweizer, P., Lellig, S., Maeder, X., Sistani, M. & Weber, W. M., Jan 2024, In: Journal of the Electron Devices Society. 12, p. 83-87 5 p.Research output: Contribution to journal › Article › peer-review
Open Access
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Deterministic integration of silicon color centers as scalable key resources for telecom quantum networks
Aberl, J. (Researcher)
01.06.2025 → 31.05.2027
Project: Funded research › FWF - Austrian Science Fund
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SiCC! Quantum light
Aberl, J. (Researcher), Salomon, A. (Researcher) & Brehm, M. (PI)
01.02.2023 → 31.01.2026
Project: Funded research › FWF - Austrian Science Fund
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Hubs for advanced solid-state quantum information devices
Aberl, J. (Researcher), Brehm, M. (Researcher) & Rastelli, A. (PI)
30.12.2022 → 29.12.2025
Project: Funded research › FFG - Austrian Research Promotion Agency
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Silicon Light Emitters Based on Defect-Enhanced Quantum Dots
Aberl, J. (Researcher), Spindlberger, L. (Researcher) & Brehm, M. (PI)
01.01.2020 → 31.12.2025
Project: Funded research › FWF - Austrian Science Fund
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Beamtime ELBE/HZDR: Ultra-low temperature epitaxy: The role of beneficial and detrimental point defects in Si:C and SiGe nanolayers on Si
Aberl, J. (Researcher), Prado-Navarrete, E. (Researcher) & Brehm, M. (PI)
30.11.2023 → 01.12.2023
Project: Funded research › Beamtimes at large scale facilities
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Fabrication and vertical position control of silicon colour centres via ultra-low temperature molecular beam epitaxy
Aberl, J. (Speaker)
11 Sept 2024Activity: Talk or presentation › Contributed talk › science-to-science
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Self-assembly of silicon color centers via ultra-low temperature molecular beam epitaxy
Aberl, J. (Speaker)
18 Sept 2023Activity: Talk or presentation › Contributed talk › science-to-science
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Luminescence properties of G-center ensembles in C irradiated epitaxial Si/SiGe heterostructures
Aberl, J. (Speaker)
15 Feb 2023Activity: Talk or presentation › Poster presentation › science-to-science
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Si/(Si)Ge heterostructures grown via low-temperature molecular beam epitaxy as building blocks for novel device concepts
Aberl, J. (Speaker)
20 Sept 2022Activity: Talk or presentation › Contributed talk › science-to-science
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Towards advanced electronic and optoelectronic devices based on epitaxial (Si)Ge layers with high Ge content
Aberl, J. (Speaker)
15 Sept 2022Activity: Talk or presentation › Contributed talk › science-to-science