Institute of Semiconductor and Solid State Physics

Websitehttps://www.jku.at/en/institute-of-semiconductor-and-solid-state-physics/

12 results

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2025

Passive Demultiplexed Two-photon State Generation from a Quantum Dot
Karli, Y., Arenas, I. A., Schimpf, C., Junior, A. J. G., Manna, S., Kappe, F., Schwarz, R., Undeutsch, G., Aigner, M., Peter, M., Covre da Silva, S. F., Rastelli, A., Weihs, G. & Remesh, V., 20 Feb 2025, (arXiv).
Research output: Working paper and reports › Preprint

Open Access
2018

Large magnetic gap at the Dirac point in a Mn-induced Bi2Te3 heterostructure
Rienks, E. D. L., Wimmer, S., Mandal, P. S., Caha, O., Ruzicka, J., Ney, A., Steiner, H., Volobuev, V., Groiß, H., Albu, M., Khan, S. A., Minar, J., Ebert, H., Bauer, G., Varykhalov, A., Sanchez-Barriga, J., Rader, O. & Springholz, G., 2018, 23 p. (arXiv.org).
Research output: Working paper and reports › Preprint
2006

g-Factor Tuning and Manipulation of Spins by an Electric Current
Wilamowski, Z., Jantsch, W., Schäffler, F. & Malissa, H., 2006, p. 0610046/ 1-4, 4 p. (arXiv.org).
Research output: Working paper and reports › Preprint
Pure spin currents induced by spin dependent scattering processes in SiGe quantum well structures
Ganichev, S. D., Danilov, S. N., Bel'kov, V. V., Giglberger, S., Tarasenko, S. A., Ivchenko, E. L., Weiss, D., Jantsch, W., Schäffler, F., Gruber, D. & Prettl, W., 2006, p. 0610736/1-6, 6 p. (arXiv.org).
Research output: Working paper and reports › Preprint
2005

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
Schäffler, F., Lai, K., Ye, P. D., Mühlberger, M., Tsui, D. C., Lyon, S. & Pan, W., 2005, 3 p. (arXiv.org).
Research output: Working paper and reports › Preprint
Single-electron transistor in strained Si/SiGe heterostructures
Schäffler, F., Pachinger, D., Pillwein, G., Mühlberger, M., Brunthaler, G., Berer, T. & Lichtenberger, H., 2005, 3 p. (arXiv.org).
Research output: Working paper and reports › Preprint
2004

Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers
Brunthaler, G. & Hörmann, T., 2004, p. 1-5, 6 p. (arXiv.org).
Research output: Working paper and reports › Preprint
2003

Spin Manipulation of free 2-dimensional electrons in Si/SiGe quantum wells
Schäffler, F., Jantsch, W., Lyon, S. & Tyryshkin, A. M., 2003, 4 p. (arXiv.org).
Research output: Working paper and reports › Preprint
2002

Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy
Myslivecek, J. & Schelling, C., Dec 2002, (arXiv.org).
Research output: Working paper and reports › Preprint
2001

Evaluation of the Bychkow-Rashba Field from the spin resonance of elctrons in a Si quantum well
Wilamowski, Z. & Jantsch, W., 2001, 4 p. (arXiv.org).
Research output: Working paper and reports › Preprint
The longitudinal spin relaxation of 2D electrons in Si/SiGe quantum wells in a magnetic field
Wilamowski, Z. & Jantsch, W., 2001, 4 p. (arXiv.org).
Research output: Working paper and reports › Preprint
2000

Weak anisotropy of the in-plane magnetoresistance in high mobility (100) Si-MOS structures
Pudalov, V. M., Brunthaler, G., Prinz, A. & Bauer, G., 2000, 1 p. (arXiv.org).
Research output: Working paper and reports › Preprint