Volatile analog memristive switching in anodic titanium-tungsten combinatorial library

Description

A combinatorial approach was employed to fabricate anodic titanium-tungsten (Ti-W) thin film library with W content ranging from 3-20 at% to systematically examine the memristive switching behaviour. Electrical characterization revealed consistent analog volatile behaviour across the entire compositional range, most likely governed by an interfacial switching mechanism. The devices displayed clear multi-level switching, enhancing the potential for high-density data storage. Furthermore, they demonstrated consistent endurance up to 104 cycles
with an excellent HRS/LRS ratio of up to 107. Ti-W anodic oxides show potential as tuneable memristors for neuromorphic applications.

Period	07 Jul 2025
Event title	16th International Workshop on Engineering of Functional Interfaces
Event type	Conference
Location	London, United KingdomShow on map