Thermal Sensor and Reference Circuits based on a Time-Controlled Bias of pn-Junctions in FinFet Technology

Description

his research introduces a new concept to generate PTAT and CTAT voltages precisely through switched-capacitor operation. In replacement of the classical BJT, the active bulk diode is utilized and forward biased by a charge-pump. During capacitor discharge the respective pn-junction voltages are sampled at different time points and further combined by charge-sharing techniques. A bandgap reference with this architecture shows an untrimmed accuracy of ± 0.73% (3σ), consuming only 21nA in a 16nm FinFET process. Similarly, a thermal sensor was implemented with an 8-bit SAR readout, which achieves a precision of ≤ 2°C without calibration on 2500 μm2 silicon area. The simple structures feature intrinsic supply rejection down to 0.85V and a digital-alike operation.

Period	26 Mar 2021
Event title	29th Workshop on Advances in Analog Circuit Design (AACD)
Event type	Conference
Location	AustriaShow on map