(Si)Ge nanosheets on SOI, grown by Molecular Beam Epitaxy at Ultra Low Temperatures, as a planar platform for RFET devices.

  • Enrique Prado-Navarrete (Speaker)

Activity: Talk or presentation › Poster presentation › science-to-science

Period12 Sept 2024
Event title20th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), 8-13 Sept. 2024
Event typeConference
LocationGermanyShow on map

Fields of science

  • 103 Physics, Astronomy

JKU Focus areas

  • Digital Transformation

Documents & Links