Si/Ge growth on pre-patterned and high-indexed surfaces: From 1D ripples to 3D domes

Description

Abstract: Si-Ge heteroepitaxy has been an essential model system for growth of self-assembled nanostructures by the Stranski-Krastanow mode. A striking feature of these structures is their highly facetted shape [1] that is governed by the formation of energetically favored facets. Evidently, the different shapes depend not only depend on the Ge coverage and growth condition, but also on the substrate orientation. Therefore, local prepattering as well as control of substrate orientation provides a means for tuning the shapes as well as lateral positions of such nanostructures [2-6].

Period	11 Sept 2012
Event title	California NanoSystems Institute, UCLA Los Angeles, NanoSystems Seminar Series 2012
Event type	Other
Location	United StatesShow on map