Semiconductor Nanostructures as Nearly-Ideal Sources of Quantum Light

Description

Semiconductor quantum dots (QDs) obtained by epitaxial growth are regarded as one of the most promising solid-state sources of triggered single and entangled photons for applications in emerging quantum communication and photonic quantum-information-processing. In this talk, we will focus on GaAs QDs in AlGaAs matrix [1,2], which show a unique combination of appealing features: fast radiative rates of ~5 GHz, capability of generating near perfectly entangled photon pairs [3] with good indistinguishability [4], ultralow multiphoton emission probability [5], high brightness [6], as well as wavelength (~800 nm) suitable for free-space quantum communication. Some of these properties were recently used to implement photonic quantum teleportation and entanglement swapping using photons sequentially emitted by the same quantum dot [7]. Because of the statistical fluctuations in the optical properties of different QDs in an ensemble, scaling up the QD hardware is still an open challenge. Realistic strategies and encouraging results relying on post-growth tuning of the QD properties [8-11] will be discussed.

Period	23 Sept 2019
Event title	Chinese Academy of Sciences, Institute of Physics
Event type	Other
Location	ChinaShow on map