Basic properties of tungsten oxide anodic memristors

Description

The current work describes the fabrication and subsequent characterization of anodic tungsten memristors in a metal-insulator-metal configuration. The resulting devices exhibit pronounced self-rectification, with conduction following Poole-Frenkel emission in the high-resistive state, and Schottky emission in the lowresistive state. The memristors are of a forming free interfacialswitching type, which enhancesthe device stability. Endurance and retention measurements demonstrate stable switching up to 10⁶ cycles and high–low resistive state
ratios of nearly three orders of magnitude. Moreover, the devices show volatile behavior, making them promising candidates for short-term synaptic plasticity in neuromorphic computing applications.

Period	07 Jul 2025
Event title	16th International Workshop on Engineering of Functional Interfaces
Event type	Conference
Location	London, United KingdomShow on map