A comparison of power amplifiers in two generations of SiGe:C technologies

Description

This paper investigates the performance of two differential power amplifiers that were designed for automotive radar applications at 79 GHz and fabricated in two different SiGe:C processes. One process is Infineon's high-speed SiGe:C commercial process B7HF200, and the other one is an advanced generation derived from it. They provide heterojunction bipolar transistors with maximum oscillation frequencies of 250 and 380 GHz, respectively. The performance of the two amplifiers is compared in terms of linearity, maximum saturated output power, power gain, power added efficiency and temperature stability.

Period	13 Mar 2012
Event title	The 7th German Microwave Conference (GeMic)
Event type	Conference
Location	GermanyShow on map