A 120-GHz FMCW Radar Frontend Demonstrator Based on a SiGe Chipset

Description

This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz. It was built with Silicon-Germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114GHz and 130GHz and a corresponding dual transceiver (TRX) chip with monostatic and quasi-monostatic TRX cells. The single-stage cascode amplifiers employed in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar front end with off-chip differential microstrip-antennas was built on RF substrate. FMCW radar measurements with frequency chirps from 119GHz to 122GHz verified the functionality of the designed radar sensor.

Period	13 Oct 2011
Event title	European Microwave Week (EuMC 2011)
Event type	Conference
Location	United KingdomShow on map