A 0.5-V 180-nm CMOS Switched-Capacitor Temperature Sensor With 319 nJ/measurement

Description

In this paper an ultra-low-power switched-capacitor (SC) temperature sensor realized in a 180nm CMOS process is introduced. The sensor is operational at supply voltages down to 0.5V, equivalent to the threshold voltages of the available MOS transistors. Using bipolar transistors for reference and temperature dependent voltage generation in a SC band-gap core, the overall temperature sensor is formed by a combination of the band-gap with a time-discrete pseudo-differential singleslope analog-to-digital converter. The temperature sensor has a power consumption of 2.62μW (4.56μW) including all biasing and clock generation at supply voltages of 0.5V (0.8V), and achieves an estimated 3sigma accuracy of 2.42°C (1.36°C) using a two-point trim for the temperature range of 10°C to 100°C (−20°C to 100°C). Besides the temperature sensing functionality, the presented circuitry additionally provides a 24kHz clock signal and stable reference voltage for other circuit blocks.

Period	26 Jun 2019
Event title	NEWCAS 2019
Event type	Conference
Location	GermanyShow on map