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Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi2Te4 Films

  • M.M. Otrokov
  • , I.P. Rusinov
  • , M. Blanco-Rey
  • , Martin Hoffmann
  • , A.Yu. Vyazovskaya
  • , S.V. Eremeev
  • , Arthur Ernst
  • , P.M. Echenique
  • , Andres Arnau
  • , Evgueni V. Chulkov

Publikation: Beitrag in FachzeitschriftArtikelBegutachtung

Abstract

Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thicknessdependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.
OriginalspracheEnglisch
Aufsatznummer107202
Seiten (von - bis)107202
Seitenumfang6
FachzeitschriftPhysical Review Letters
Volume122
Ausgabenummer10
DOIs
PublikationsstatusVeröffentlicht - 13 März 2019

Wissenschaftszweige

  • 103 Physik, Astronomie

JKU-Schwerpunkte

  • Digital Transformation

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