Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

A. Marzegalli; Fabio Isa; Heiko Groiss; Elisabeth Müller; Claudiu V. Falub; Alfonso G. Taboada; Philippe Niedermann; G. Isella; Friedrich Schäffler; Francesco Montalenti; H. von Känel; Leo Miglio

doi:10.1002/adma.201300550

Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning

A. Marzegalli
, Fabio Isa
, Heiko Groiss
, Elisabeth Müller
, Claudiu V. Falub
, Alfonso G. Taboada
, Philippe Niedermann
, G. Isella
, Friedrich Schäffler
, Francesco Montalenti
, H. von Känel
, Leo Miglio

Abteilung für Halbleiterphysik

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.

Originalsprache	Englisch
Seiten (von - bis)	4408-4412
Seitenumfang	5
Fachzeitschrift	Advanced Materials
Volume	25
Ausgabenummer	32
DOIs	https://doi.org/10.1002/adma.201300550
Publikationsstatus	Veröffentlicht - 27 Aug. 2013

Wissenschaftszweige

103026 Quantenoptik
103009 Festkörperphysik
103 Physik, Astronomie
103011 Halbleiterphysik
202018 Halbleiterelektronik
210006 Nanotechnologie

JKU-Schwerpunkte

Nano-, Bio- and Polymer-Systems: From Structure to Function

Zugriff auf Dokument

10.1002/adma.201300550

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Dieses zitieren

Marzegalli, A., Isa, F., Groiss, H., Müller, E., Falub, C. V., Taboada, A. G., Niedermann, P., Isella, G., Schäffler, F., Montalenti, F., von Känel, H., & Miglio, L. (2013). Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning. Advanced Materials, 25(32), 4408-4412. https://doi.org/10.1002/adma.201300550

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abstract = "An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.",

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language = "English",

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Marzegalli, A, Isa, F, Groiss, H, Müller, E, Falub, CV, Taboada, AG, Niedermann, P, Isella, G, Schäffler, F, Montalenti, F, von Känel, H & Miglio, L 2013, 'Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning', Advanced Materials, Jg. 25, Nr. 32, S. 4408-4412. https://doi.org/10.1002/adma.201300550

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AU - Falub, Claudiu V.

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AU - Niedermann, Philippe

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AU - Miglio, Leo

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AB - An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.

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