Transferred electron effect on AlGaAs/GaAs multi-quantum-well structure

Andreas Springer; Christian Diskus; Kurt Lübke; Andreas Stelzer; Hartwig Thim

Transferred electron effect on AlGaAs/GaAs multi-quantum-well structure

Andreas Springer
, Christian Diskus
, Kurt Lübke
, Andreas Stelzer
, Hartwig Thim

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

Abstract

The use of an AlGaAs/GaAs multi-quantum-well structure as an active layer for a planar injection limited TED is proposed to enhance the efficiency of the device. Monolithically integrated 60GHz GaAs TED-oscillators have been febricated and showed an efficiency of about 1.6% with an associated output power of 6.5mW which is an improvement of about 29% compared to homogeneousely doped devices. To our knowledge this is the first observation of the transferred electron effect occuring in a quantum-well structure.

Originalsprache	Englisch
Titel	Proc. 1997 of the 27th European Solid-State Device Research Conference (ESSDERC 97)
Seiten	296-299
Seitenumfang	4
Publikationsstatus	Veröffentlicht - 1997

Wissenschaftszweige

202 Elektrotechnik, Elektronik, Informationstechnik
202019 Hochfrequenztechnik
202029 Mikrowellentechnik
202030 Nachrichtentechnik
202033 Radartechnik
202037 Signalverarbeitung
202038 Telekommunikation
202021 Industrielle Elektronik
202027 Mechatronik
202028 Mikroelektronik
202036 Sensorik
203017 Mikromechanik
502058 Digitale Transformation

Dieses zitieren

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title = "Transferred electron effect on AlGaAs/GaAs multi-quantum-well structure",

abstract = "The use of an AlGaAs/GaAs multi-quantum-well structure as an active layer for a planar injection limited TED is proposed to enhance the efficiency of the device. Monolithically integrated 60GHz GaAs TED-oscillators have been febricated and showed an efficiency of about 1.6\% with an associated output power of 6.5mW which is an improvement of about 29\% compared to homogeneousely doped devices. To our knowledge this is the first observation of the transferred electron effect occuring in a quantum-well structure.",

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year = "1997",

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AU - Springer, Andreas

AU - Diskus, Christian

AU - Lübke, Kurt

AU - Stelzer, Andreas

AU - Thim, Hartwig

PY - 1997

Y1 - 1997

N2 - The use of an AlGaAs/GaAs multi-quantum-well structure as an active layer for a planar injection limited TED is proposed to enhance the efficiency of the device. Monolithically integrated 60GHz GaAs TED-oscillators have been febricated and showed an efficiency of about 1.6% with an associated output power of 6.5mW which is an improvement of about 29% compared to homogeneousely doped devices. To our knowledge this is the first observation of the transferred electron effect occuring in a quantum-well structure.

AB - The use of an AlGaAs/GaAs multi-quantum-well structure as an active layer for a planar injection limited TED is proposed to enhance the efficiency of the device. Monolithically integrated 60GHz GaAs TED-oscillators have been febricated and showed an efficiency of about 1.6% with an associated output power of 6.5mW which is an improvement of about 29% compared to homogeneousely doped devices. To our knowledge this is the first observation of the transferred electron effect occuring in a quantum-well structure.

M3 - Conference proceedings

SN - 2-86332-221-4

SP - 296

EP - 299

BT - Proc. 1997 of the 27th European Solid-State Device Research Conference (ESSDERC 97)

ER -