SiGe quantum dots for fast hole spin Rabi oscillations

N. Ares; Georgios Katsaros; V. N. Golovach; Jianjun Zhang; A. Prager; L. I. Glazman; Oliver G. Schmidt; S. De Franceschi

doi:10.1063/1.4858959

SiGe quantum dots for fast hole spin Rabi oscillations

N. Ares
, Georgios Katsaros
, V. N. Golovach
, Jianjun Zhang
, A. Prager
, L. I. Glazman
, Oliver G. Schmidt
, S. De Franceschi

Abteilung für Halbleiterphysik

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique

Originalsprache	Englisch
Aufsatznummer	263113
Seiten (von - bis)	263113
Seitenumfang	3
Fachzeitschrift	Applied Physics Letters
Volume	103
Ausgabenummer	26
DOIs	https://doi.org/10.1063/1.4858959
Publikationsstatus	Veröffentlicht - 23 Dez. 2013

Wissenschaftszweige

103026 Quantenoptik
103009 Festkörperphysik
103 Physik, Astronomie
103011 Halbleiterphysik
202018 Halbleiterelektronik
210006 Nanotechnologie

JKU-Schwerpunkte

Nano-, Bio- and Polymer-Systems: From Structure to Function

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10.1063/1.4858959

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AU - Katsaros, Georgios

AU - Golovach, V. N.

AU - Zhang, Jianjun

AU - Prager, A.

AU - Glazman, L. I.

AU - Schmidt, Oliver G.

AU - De Franceschi, S.

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