Polytypism of GaAs, InP, InAs, and InSb: An ab initio study

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Aufsatznummer	075217
Seiten (von - bis)	075217
Seitenumfang	9
Fachzeitschrift	Physical Review B: Condensed Matter and Materials Physics
Volume	84
Ausgabenummer	7
DOIs	https://doi.org/10.1103/PhysRevB.84.075217
Publikationsstatus	Veröffentlicht - 17 Aug. 2011

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@article{21eb23242dfd48fab7981d7e0441f04b,

title = "Polytypism of GaAs, InP, InAs, and InSb: An ab initio study",

author = "C. Panse and Dominik Kriegner and F. Bechstedt",

year = "2011",

month = aug,

day = "17",

doi = "10.1103/PhysRevB.84.075217",

language = "English",

volume = "84",

pages = "075217",

journal = "Physical Review B: Condensed Matter and Materials Physics",

issn = "2469-9969",

publisher = "The American Physical Society",

number = "7",

}

TY - JOUR

T1 - Polytypism of GaAs, InP, InAs, and InSb: An ab initio study

AU - Panse, C.

AU - Kriegner, Dominik

AU - Bechstedt, F.

PY - 2011/8/17

Y1 - 2011/8/17

UR - https://www.scopus.com/pages/publications/80052497512

U2 - 10.1103/PhysRevB.84.075217

DO - 10.1103/PhysRevB.84.075217

M3 - Article

SN - 2469-9969

VL - 84

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JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 7

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ER -