Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

Originalsprache	Englisch
Titel	Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE
Erscheinungsort	Piscataway, NJ, USA
Verlag	IEEE
Seiten	169-172
Seitenumfang	4
Publikationsstatus	Veröffentlicht - 1999

Name	Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998

Wissenschaftszweige

Lanzerstorfer, S., Pedarnig, J. D., Gunasekaran, R. A., Bäuerle, D., & Jantsch, W. (1999). Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si. in Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE (S. 169-172). (Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998). IEEE.

Lanzerstorfer, Sven ; Pedarnig, Johannes David ; Gunasekaran, R. A. et al. / Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si. Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE. Piscataway, NJ, USA : IEEE, 1999. S. 169-172 (Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998).

@inproceedings{e89f6c71d0f34b7aac4db1592bb142c6,

title = "Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si",

author = "Sven Lanzerstorfer and Pedarnig, \{Johannes David\} and Gunasekaran, \{R. A.\} and Dieter B{\"a}uerle and Wolfgang Jantsch",

year = "1999",

language = "English",

series = "Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998",

publisher = "IEEE",

pages = "169--172",

booktitle = "Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE",

}

Lanzerstorfer, S, Pedarnig, JD, Gunasekaran, RA, Bäuerle, D & Jantsch, W 1999, Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si. in Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE. Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998, IEEE, Piscataway, NJ, USA, S. 169-172.

Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si. / Lanzerstorfer, Sven; Pedarnig, Johannes David; Gunasekaran, R. A. et al.
Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE. Piscataway, NJ, USA: IEEE, 1999. S. 169-172 (Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998).

Publikation: Beitrag in Buch/Bericht/Konferenzband › Konferenzbeitrag › Begutachtung

TY - GEN

T1 - Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si

AU - Lanzerstorfer, Sven

AU - Pedarnig, Johannes David

AU - Gunasekaran, R. A.

AU - Bäuerle, Dieter

AU - Jantsch, Wolfgang

PY - 1999

Y1 - 1999

M3 - Conference proceedings

T3 - Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998

SP - 169

EP - 172

BT - Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE

PB - IEEE

CY - Piscataway, NJ, USA

ER -

Lanzerstorfer S, Pedarnig JD, Gunasekaran RA, Bäuerle D , Jantsch W. Photoluminescence at 1.5 µm of heavily Er-doped insulating films on Si. in Proceedings of the 10th Conference of Semiconducting and Insulating Materials SIMC-X, IEEE. Piscataway, NJ, USA: IEEE. 1999. S. 169-172. (Proc.of the 10.Conf.of Semiconducting and Insulating Materials SIMC-X, Berkeley, June1998).