@article{a83549af7edd4f2389567bed57d84d7c,
title = "Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric",
author = "Friedrich Sch{\"a}ffler and K. Lai and Ye, \{P. D.\} and Michael M{\"u}hlberger and D.C. Tsui and S. Lyon and W. Pan",
year = "2005",
month = oct,
day = "3",
doi = "10.1063/1.2076439",
language = "English",
volume = "87",
pages = "142103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}