Intersubband absorption in modulation doped p-type Si/Si1-xGex quantum wells: a systematic study

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Seiten (von - bis)	2361
Seitenumfang	1
Fachzeitschrift	Japanese Journal of Applied Physics
Volume	33
Ausgabenummer	4S
DOIs	https://doi.org/10.1143/jjap.33.2361
Publikationsstatus	Veröffentlicht - Apr. 1994

Wissenschaftszweige

@article{dccbeca0f2624ea3a4006f7cf7339bfb,

title = "Intersubband absorption in modulation doped p-type Si/Si1-xGex quantum wells: a systematic study",

author = "G. Abstreiter and G{\"u}nther Bauer and Thomas Fromherz and Manfred Helm and Ewald Koppensteiner and J. N{\"u}tzel",

year = "1994",

month = apr,

doi = "10.1143/jjap.33.2361",

language = "English",

volume = "33",

pages = "2361",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "4S",

}

TY - JOUR

T1 - Intersubband absorption in modulation doped p-type Si/Si1-xGex quantum wells: a systematic study

AU - Abstreiter, G.

AU - Bauer, Günther

AU - Fromherz, Thomas

AU - Helm, Manfred

AU - Koppensteiner, Ewald

AU - Nützel, J.

PY - 1994/4

Y1 - 1994/4

UR - https://www.scopus.com/pages/publications/0028405055

U2 - 10.1143/jjap.33.2361

DO - 10.1143/jjap.33.2361

M3 - Article

SN - 0021-4922

VL - 33

SP - 2361

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4S

ER -