Growth of partially strain-relaxed Si1-yCy epilayers on (100) Si

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@article{7d7442fa6bca4dfab1306069edd983e5,

title = "Growth of partially strain-relaxed Si1-yCy epilayers on (100) Si",

author = "G{\"u}nther Bauer and U. G{\"o}sele and A. Pl{\"o}{\ss}l and S. Senz and Julian Stangl and Stefan Zerlauth",

year = "1998",

doi = "10.1007/s003390050752",

language = "English",

volume = "67",

pages = "147--150",

journal = "Applied Physics A",

publisher = "Springer Verlag",

number = "2",

}

TY - JOUR

T1 - Growth of partially strain-relaxed Si1-yCy epilayers on (100) Si

AU - Bauer, Günther

AU - Gösele, U.

AU - Plößl, A.

AU - Senz, S.

AU - Stangl, Julian

AU - Zerlauth, Stefan

PY - 1998

Y1 - 1998

UR - https://www.scopus.com/pages/publications/0032136105

U2 - 10.1007/s003390050752

DO - 10.1007/s003390050752

M3 - Article

VL - 67

SP - 147

EP - 150

JO - Applied Physics A

JF - Applied Physics A

IS - 2

ER -