Electrical properties of Si
            1-xC
            x alloys and modulation doped Si/Si
            1-xC
            x/Si structures

Electrical properties of Si _1-xC _x alloys and modulation doped Si/Si _1-xC _x/Si structures

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@article{e992adb8def941649cf3b6746dd2cfda,

title = "Electrical properties of Si 1-xC x alloys and modulation doped Si/Si 1-xC x/Si structures",

author = "W. Faschinger and Stefan Zerlauth and G{\"u}nther Bauer and Leopold Palmetshofer",

year = "1995",

doi = "10.1063/1.114409",

language = "English",

volume = "67",

pages = "3933–3935",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Electrical properties of Si 1-xC x alloys and modulation doped Si/Si 1-xC x/Si structures

AU - Faschinger, W.

AU - Zerlauth, Stefan

AU - Bauer, Günther

AU - Palmetshofer, Leopold

PY - 1995

Y1 - 1995

UR - https://www.scopus.com/pages/publications/36449000260

U2 - 10.1063/1.114409

DO - 10.1063/1.114409

M3 - Article

VL - 67

SP - 3933

EP - 3935

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -