Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

G. Hobler; G. Otto; H. Hutter; K. Mayerhofer; Kurt Piplits; Leopold Palmetshofer

doi:10.1016/j.nimb.2005.08.140

Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

G. Hobler
, G. Otto
, H. Hutter
, K. Mayerhofer
, Kurt Piplits
, Leopold Palmetshofer

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Seiten (von - bis)	667-669
Seitenumfang	3
Fachzeitschrift	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Volume	242
Ausgabenummer	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.140
Publikationsstatus	Veröffentlicht - Jän. 2006

Wissenschaftszweige

103 Physik, Astronomie
103009 Festkörperphysik
103011 Halbleiterphysik
103017 Magnetismus
103018 Materialphysik
210006 Nanotechnologie
103040 Photonik
202032 Photovoltaik

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10.1016/j.nimb.2005.08.140

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title = "Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements",

author = "G. Hobler and G. Otto and H. Hutter and K. Mayerhofer and Kurt Piplits and Leopold Palmetshofer",

year = "2006",

month = jan,

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Hobler, G, Otto, G, Hutter, H, Mayerhofer, K, Piplits, K & Palmetshofer, L 2006, 'Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Jg. 242, Nr. 1-2, S. 667-669. https://doi.org/10.1016/j.nimb.2005.08.140

Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements. / Hobler, G.; Otto, G.; Hutter, H. et al.
in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Volume 242, Nr. 1-2, 01.2006, S. 667-669.

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

TY - JOUR

T1 - Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements

AU - Hobler, G.

AU - Otto, G.

AU - Hutter, H.

AU - Mayerhofer, K.

AU - Piplits, Kurt

AU - Palmetshofer, Leopold

PY - 2006/1

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DO - 10.1016/j.nimb.2005.08.140

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JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and

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