Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Originalsprache	Englisch
Seiten (von - bis)	245-248
Seitenumfang	4
Fachzeitschrift	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume	96
Ausgabenummer	1-2
DOIs	https://doi.org/10.1016/0168-583X(94)00492-7
Publikationsstatus	Veröffentlicht - 1995

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@article{a333937f2b0f4dc4bf2c87d0f2796ad7,

title = "Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon",

author = "Y. Suprun-Belevich and Leopold Palmetshofer",

year = "1995",

doi = "10.1016/0168-583X(94)00492-7",

language = "English",

volume = "96",

pages = "245--248",

journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",

number = "1-2",

}

TY - JOUR

T1 - Deep Defect Levels and Mechanical Strain in Ge+-implanted Silicon

AU - Suprun-Belevich, Y.

AU - Palmetshofer, Leopold

PY - 1995

Y1 - 1995

UR - https://www.scopus.com/pages/publications/13644271902

U2 - 10.1016/0168-583X(94)00492-7

DO - 10.1016/0168-583X(94)00492-7

M3 - Article

VL - 96

SP - 245

EP - 248

JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -