DC-Offset Compensation Concept for Monostatic FMCW Radar Transceivers

Martin Jahn; Christoph Wagner; Andreas Stelzer

doi:10.1109/LMWC.2010.2056359

DC-Offset Compensation Concept for Monostatic FMCW Radar Transceivers

Martin Jahn
, Christoph Wagner
, Andreas Stelzer

Institut für Nachrichtentechnik und Hochfrequenzsysteme

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

A novel dc-offset compensation technique for monostatic frequency-modulated continuous-wave (FMCW) transceivers is presented. This approach uses the intermediate frequency (IF) port of the active direct-conversion mixer to access its collector resistors. Additional external variable resistors in parallel connection can vary the total load resistance in each branch and hence compensate or generate a dc-offset voltage at the output. Since the wiring is located on the low-frequency side of the mixer, the variable resistors can also be external (off-chip), which offers great flexibility and eases application. The concept was successfully tested with an integrated 77 GHz automotive radar mixer fabricated in a 200 GHz fT Silicon Germanium (SiGe) bipolar technology.

Originalsprache	Englisch
Aufsatznummer	5535199
Seiten (von - bis)	525-527
Seitenumfang	3
Fachzeitschrift	IEEE Microwave and Wireless Components Letters
Volume	20
Ausgabenummer	9
DOIs	https://doi.org/10.1109/LMWC.2010.2056359
Publikationsstatus	Veröffentlicht - Sep. 2010

Wissenschaftszweige

202019 Hochfrequenztechnik
202033 Radartechnik

JKU-Schwerpunkte

Mechatronics and Information Processing

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10.1109/LMWC.2010.2056359

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abstract = "A novel dc-offset compensation technique for monostatic frequency-modulated continuous-wave (FMCW) transceivers is presented. This approach uses the intermediate frequency (IF) port of the active direct-conversion mixer to access its collector resistors. Additional external variable resistors in parallel connection can vary the total load resistance in each branch and hence compensate or generate a dc-offset voltage at the output. Since the wiring is located on the low-frequency side of the mixer, the variable resistors can also be external (off-chip), which offers great flexibility and eases application. The concept was successfully tested with an integrated 77 GHz automotive radar mixer fabricated in a 200 GHz fT Silicon Germanium (SiGe) bipolar technology.",

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