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An Integrated 20 GHz SiGe Bipolar Differential Oscillator with High Tuning Range

  • K. Ettinger
  • , Marcus Bergmair
  • , Harald Pretl
  • , Wolfgang Thomann
  • , Josef Fenk
  • , Robert Weigel

Publikation: Beitrag in Buch/Bericht/KonferenzbandKonferenzbeitragBegutachtung

Abstract

A fully integrated, differential LC oscillator manufactured in Infineons B7HF SiGe bipolar technology with an fT and fmax of 75 GHz is presented. The oscillator features a tank consisting of on-chip stripline inductors and the parasitic capacitances of the oscillator transistors. A tuning range of 14-21.5 GHz over bias current is achieved. The output buffer is inductively coupled to the tank. Total current consumption including the buffer is 13 mA from a 3 V supply at the maximum oscillation frequency of 21.5 GHz. The measured phase-noise at 1 MHz offset is -85 dBc/Hz at a core bias current of 7 mA.
OriginalspracheEnglisch
TitelProceedings of the 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Seitenumfang3
PublikationsstatusVeröffentlicht - Sep. 2000

Wissenschaftszweige

  • 103011 Halbleiterphysik
  • 202018 Halbleiterelektronik
  • 202019 Hochfrequenztechnik
  • 202028 Mikroelektronik

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